Researchers Develop High-Performance Transistor Using Gallium-Doped Indium Oxide

Researchers from the Institute of Industrial Science at the University of Tokyo have developed a new transistor that could surpass traditional silicon-based models. With silicon transistors reaching their physical limits, the team turned to gallium-doped indium oxide (InGaOx) as a new semiconductor material. They built a ‘gate-all-around’ (GAA) transistor structure, in which the gate fully encloses the channel, enhancing control and scalability. The use of gallium doping helps reduce oxygen vacancies in the material, increasing stability and performance. The device, created through atomic-layer deposition and crystallization, showed high electron mobility of 44.5 cm²/Vs and stable operation under stress for nearly three hours. These advancements position the GAA MOSFET as a promising candidate for next-generation electronics that require compact, high-performance transistors. The innovation holds potential for applications in artificial intelligence, big data, and other computation-intensive fields. The work will be presented at the 2025 Symposium on VLSI Technology and Circuits, signaling a step forward in overcoming the limitations of silicon in modern electronic devices.