Researchers Develop High-Performance Tin Perovskite Transistors Using Vapor Deposition

A collaborative research effort led by Professor Yong-Young Noh and Dr. Youjin Reo of POSTECH, alongside researchers from the University of Electronic Science and Technology of China, has yielded a major advancement in semiconductor technology. The team developed high-performance p-type transistors using a novel vapor deposition method to fabricate tin-based perovskite (CsSnI3) semiconductors. Traditionally made via solution processing, this material now benefits from thermal evaporation—a process widely used in OLED and semiconductor manufacturing—allowing for higher quality, consistency, and scalability. By introducing a small amount of lead chloride, the team further enhanced the crystallinity and uniformity of the resulting thin films. These newly developed transistors exhibit a hole mobility exceeding 30 cm²/V·s and an on/off current ratio of 10⁸, placing their performance on par with commercial n-type oxide semiconductors. Importantly, this method also supports large-area fabrication and compatibility with existing OLED manufacturing tools, opening new possibilities for flexible, ultra-thin, and energy-efficient electronic devices such as high-resolution displays and wearable technology. The study, published in *Nature Electronics*, was funded by the National Research Foundation of Korea and Samsung Display, underscoring both scientific and industrial significance.