Fudan University Develops Ultra-Fast Flash Memory Capable of 25 Billion Writes per Second

Researchers at Fudan University in China have created a groundbreaking flash memory device, dubbed ‘PoX,’ capable of programming individual bits in just 400 picoseconds—equating to a write speed of 25 billion operations per second. This makes it the fastest non-volatile memory ever developed, surpassing current flash technology by over 10,000 times. Unlike traditional RAM, which is fast but loses data when power is cut, PoX retains data with zero standby power, making it ideal for edge AI systems and battery-limited applications.

The innovation is credited to a re-engineering of flash memory architecture, particularly by replacing silicon channels with two-dimensional Dirac graphene, enabling ballistic charge transport and ultra-efficient data injection. This breakthrough also bypasses traditional speed bottlenecks by exploiting a novel phenomenon known as two-dimensional super-injection.

According to the research team led by Prof. Zhou Peng, the development could revolutionize AI hardware by resolving memory bandwidth and power bottlenecks. Although endurance and fabrication yields remain undisclosed, the device shows strong compatibility with existing 2D material semiconductor processes. The memory is expected to have far-reaching industrial implications, potentially removing the need for separate high-speed SRAM caches, reducing chip area and power consumption, and enabling persistent, high-speed RAM for AI workloads and consumer electronics.